Ultrasonic Atomizer UAM1000 For Photoresist Coating

The UAM1000 ultrasonic atomizer provides precise photoresist deposition for semiconductor wafers, especially for MEMS and 3D microstructures. It enables conformal coating on deep grooves and sidewalls without pinholes, using low-pressure atomization to protect fragile substrates. High material utilization reduces photoresist waste, and the anti-clog nozzle design supports various resist types.

Key Selling Points

• Conformal spraying: High-frequency ultrasonic atomization produces fine droplets that coat deep grooves and sidewalls uniformly, eliminating missing glue and defects.
• High material utilization: Directional deposition reduces photoresist consumption by 40-60% compared to spin coating, saving costs.
• Low-pressure non-contact: Prevents damage to fragile microstructures like cantilevers and thin films, improving yield.
• Anti-clog nozzle: Compatible with low-viscosity and SU-8 thick photoresists, ensuring uninterrupted operation.
• Cleanroom compatible: Designed for Class 1000 environments, with sealed chamber to prevent contamination.

Technical Specifications

Models and Options

The UAM1000 is part of the UAM series, including UAM1000, UAM2000, UAM4000, UAM6000, UAM8000, UAM9000, each offering different coating areas and throughputs.

Materials and Structure

Made of stainless steel and titanium alloy, the atomizer is resistant to chemicals and wear. The non-clogging design ensures long-term reliability with various photoresist chemistries.

Applications

Specifically used for photoresist coating on MEMS wafers, 3D deep trench/step structures, and SU-8 thick photoresist applications. Suitable for research and small-batch production of micro-electromechanical systems.

Customization

Customizable spray patterns, integration with existing wafer handling systems, and options for different nozzle configurations to match specific wafer sizes.

Case Study

An MEMS acoustic sensor chip manufacturer in Korea used 2 units for photoresist conformal spraying. Over 2 years, deep trench lithography defect rate decreased by 70%, photoresist consumption cut by 55%, and micro-structure damage scrap rate reduced from 22% to below 3%.

FAQ